FDS4141SN00136P
onsemi
onsemi
MOSFET P-CH 40V 10.8A 8SOIC
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FDS4141SN00136P, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FDS4141SN00136P for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2670 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 2.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-SOIC
- Package / Case: 8-SOIC (0.154", 3.90mm Width)
Related Products
Fairchild Semiconductor
HUFA75332S3S
IXYS
IXTQ30N50P
onsemi
FQD6N40TF
Infineon Technologies
BSS7728NH6327XTSA1
Toshiba Semiconductor and Storage
2SK3565(Q,M)
onsemi
NTD18N06LT4
Infineon Technologies
AUIRF3315STRL
Infineon Technologies
SI4435DYPBF
IXYS
IXFK60N25Q
Infineon Technologies