FDP10N60NZ
onsemi
onsemi
MOSFET N-CH 600V 10A TO220-3
$0.00
Available to order
Reference Price (USD)
1+
$1.82000
10+
$1.64700
100+
$1.32340
500+
$1.02930
1,000+
$0.85285
Exquisite packaging
Discount
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Boost your electronic applications with FDP10N60NZ, a reliable Transistors - FETs, MOSFETs - Single by onsemi. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, FDP10N60NZ meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±25V
- Input Capacitance (Ciss) (Max) @ Vds: 1475 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 185W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
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