FDN028N20
onsemi
onsemi
MOSFET N-CH 20V 6.1A SUPERSOT3
$0.56
Available to order
Reference Price (USD)
3,000+
$0.15925
6,000+
$0.14897
15,000+
$0.13870
30,000+
$0.13151
75,000+
$0.13076
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FDN028N20, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 6.1A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 28mOhm @ 5.2A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 600 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-23-3
- Package / Case: TO-236-3, SC-59, SOT-23-3
Related Products
Rohm Semiconductor
R6020JNJGTL
Vishay Siliconix
SQJ460AEP-T1_BE3
STMicroelectronics
STP80NF10FP
Infineon Technologies
IRFR4104TRLPBF
Infineon Technologies
IRF7853TRPBF
Diodes Incorporated
DMN3731UFB4-7B
Fairchild Semiconductor
FDB8880
Taiwan Semiconductor Corporation
TSM2305CX RFG
NTE Electronics, Inc
NTE490
Rectron USA