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FDMC2512SDC

Fairchild Semiconductor
FDMC2512SDC Preview
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 3
$0.00
Available to order
Reference Price (USD)
3,000+
$1.33650
6,000+
$1.28700
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 25 V
  • Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
  • Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
  • Vgs(th) (Max) @ Id: 2.5V @ 1mA
  • Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 4410 pF @ 13 V
  • FET Feature: -
  • Power Dissipation (Max): 3W (Ta), 66W (Tc)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: 8-PQFN (3.3x3.3)
  • Package / Case: 8-PowerTDFN

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