FDMC2512SDC
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 3
$0.00
Available to order
Reference Price (USD)
3,000+
$1.33650
6,000+
$1.28700
Exquisite packaging
Discount
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Experience the power of FDMC2512SDC, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDMC2512SDC is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 40A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 2mOhm @ 27A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4410 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 3W (Ta), 66W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3)
- Package / Case: 8-PowerTDFN
