FDFMA3N109
onsemi
onsemi
MOSFET N-CH 30V 2.9A 6MICROFET
$0.00
Available to order
Reference Price (USD)
3,000+
$0.31549
6,000+
$0.29373
15,000+
$0.28285
30,000+
$0.27692
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDFMA3N109, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDFMA3N109 is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 123mOhm @ 2.9A, 4.5V
- Vgs(th) (Max) @ Id: 1.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 220 pF @ 15 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-MicroFET (2x2)
- Package / Case: 6-VDFN Exposed Pad
Related Products
Infineon Technologies
IRFZ24NSTRR
Infineon Technologies
IRF5804
Infineon Technologies
IPW65R310CFDFKSA1
Diodes Incorporated
2N7002TA
onsemi
NTD32N06LT4G
Infineon Technologies
IRF6720S2TR1PBF
onsemi
FDP085N10A
Alpha & Omega Semiconductor Inc.
AON6414AL
Alpha & Omega Semiconductor Inc.
AO4588
Nexperia USA Inc.