FDD8874
Fairchild Semiconductor
Fairchild Semiconductor
POWER FIELD-EFFECT TRANSISTOR, 3
$0.61
Available to order
Reference Price (USD)
2,500+
$0.46858
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FDD8874, a premium Transistors - FETs, MOSFETs - Single from Fairchild Semiconductor. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FDD8874 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 116A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 5.1mOhm @ 35A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2990 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 110W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Micro Commercial Co
MCQ4435A-TP
onsemi
NTMFS5H610NLT1G
STMicroelectronics
STL130N6F7
Diodes Incorporated
DMTH10H025LK3Q-13
Infineon Technologies
BSS119L6433
Vishay Siliconix
IRFU224PBF
Infineon Technologies
IPB049N08N5ATMA1
Microchip Technology
APT50M50L2LLG
Toshiba Semiconductor and Storage
TPH9R506PL,LQ
STMicroelectronics