FDD850N10LD
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 100V 15.3A TO252-4
$0.00
Available to order
Reference Price (USD)
2,500+
$0.51898
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Fairchild Semiconductor presents FDD850N10LD, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, FDD850N10LD delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 15.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): -
- Rds On (Max) @ Id, Vgs: 75mOhm @ 12A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1465 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 42W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-4
- Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Related Products
Nexperia USA Inc.
BUK7513-75B,127
STMicroelectronics
STW70N10F4
Infineon Technologies
BSP316PL6327
Renesas Electronics America Inc
RJK4007DPP-M0#T2
Infineon Technologies
IRF7603TR
Infineon Technologies
IPB60R230P6ATMA1
Infineon Technologies
BSS806NL6327HTSA1
Renesas Electronics America Inc
RQJ0201UGDQA#H1
Vishay Siliconix
SIHF22N60S-E3
STMicroelectronics