FDD5612
onsemi
onsemi
MOSFET N-CH 60V 5.4A TO252-3
$0.00
Available to order
Reference Price (USD)
2,500+
$0.42739
5,000+
$0.40720
12,500+
$0.39278
25,000+
$0.39068
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover FDD5612, a versatile Transistors - FETs, MOSFETs - Single solution from onsemi, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252AA
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRFR9220
Vishay Siliconix
SUM25P10-138-E3
Vishay Siliconix
IRF737LCSTRR
Infineon Technologies
IRF7466TRPBF
onsemi
NTD110N02RST4G
Vishay Siliconix
IRF2807ZSTRR
onsemi
2SK4125-1E
Fairchild Semiconductor
FQB13N06LTM
Vishay Siliconix
SQ7415AEN-T1_BE3
Toshiba Semiconductor and Storage