FDD26AN06A0
Fairchild Semiconductor
Fairchild Semiconductor
MOSFET N-CH 60V 7A/36A TO252AA
$0.94
Available to order
Reference Price (USD)
1+
$0.94000
500+
$0.9306
1000+
$0.9212
1500+
$0.9118
2000+
$0.9024
2500+
$0.893
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDD26AN06A0 by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDD26AN06A0 inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 36A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 26mOhm @ 36A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252, (D-Pak)
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Vishay Siliconix
IRF830ASPBF
Infineon Technologies
IPW60R145CFD7XKSA1
Renesas Electronics America Inc
2SK3116B-ZK-E1-AY
onsemi
FSS163-TL-E
Diodes Incorporated
DMN10H170SK3-13
onsemi
FQP9P25
Toshiba Semiconductor and Storage
TK30E06N1,S1X
Fairchild Semiconductor
FQP6P25
Vishay Siliconix
SIE810DF-T1-E3
Renesas Electronics America Inc