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FDC638APZ

onsemi
FDC638APZ Preview
onsemi
MOSFET P-CH 20V 4.5A SUPERSOT6
$0.55
Available to order
Reference Price (USD)
3,000+
$0.16760
6,000+
$0.15679
15,000+
$0.14598
30,000+
$0.13841
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 4.5A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 43mOhm @ 4.5A, 4.5V
  • Vgs(th) (Max) @ Id: 1.5V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 4.5 V
  • Vgs (Max): ±12V
  • Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 10 V
  • FET Feature: -
  • Power Dissipation (Max): 1.6W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SuperSOT™-6
  • Package / Case: SOT-23-6 Thin, TSOT-23-6

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