FDC30N20DZ
onsemi
onsemi
MOSFET N-CH 30V 4.6A SUPERSOT6
$0.30
Available to order
Reference Price (USD)
3,000+
$0.18039
6,000+
$0.16875
15,000+
$0.15711
30,000+
$0.14897
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience the power of FDC30N20DZ, a premium Transistors - FETs, MOSFETs - Single from onsemi. Part of the Discrete Semiconductor Products family, this MOSFET is tailored for high-efficiency power conversion and signal amplification. With its rugged construction and advanced technology, FDC30N20DZ is suited for harsh environments and high-demand applications. Request a quote now to secure this essential component for your projects!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 535 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 960mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SuperSOT™-6
- Package / Case: SOT-23-6 Thin, TSOT-23-6
Related Products
Infineon Technologies
AUIRFS4310TRL
Rohm Semiconductor
R6530ENXC7G
onsemi
MTD5N25ET4
Panjit International Inc.
PJA3430_R1_00001
STMicroelectronics
STU11N65M2
Texas Instruments
CSD25480F3
STMicroelectronics
STF12N50DM2
Nexperia USA Inc.
PSMN1R0-30YLDX
Texas Instruments
CSD25483F4T
Vishay Siliconix