FDB8832
onsemi
onsemi
MOSFET N-CH 30V 34A/80A TO263AB
$0.00
Available to order
Reference Price (USD)
800+
$1.87853
1,600+
$1.75329
2,400+
$1.66563
5,600+
$1.60301
Exquisite packaging
Discount
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Optimize your electronic systems with FDB8832, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FDB8832 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 34A (Ta), 80A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1.9mOhm @ 80A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 265 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11400 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 300W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK (TO-263)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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