FDB6035L
Fairchild Semiconductor
Fairchild Semiconductor
N-CHANNEL POWER MOSFET
$3.14
Available to order
Reference Price (USD)
1+
$3.14000
500+
$3.1086
1000+
$3.0772
1500+
$3.0458
2000+
$3.0144
2500+
$2.983
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose FDB6035L by Fairchild Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with FDB6035L inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 26A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1230 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 75W (Tc)
- Operating Temperature: -65°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Related Products
onsemi
FDS4675
Diodes Incorporated
DMN2991UTQ-7
onsemi
FDN359AN
Infineon Technologies
AUIRFS3806
Alpha & Omega Semiconductor Inc.
AOT3N100
Infineon Technologies
AUIRF1010ZL
Infineon Technologies
IPW60R075CPAFKSA1
Microchip Technology
APT34M60B
Diodes Incorporated
DMG2307L-7
Renesas Electronics America Inc