FCP360N65S3R0
onsemi
onsemi
MOSFET N-CH 650V 10A TO220-3
$0.87
Available to order
Reference Price (USD)
800+
$1.03301
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with FCP360N65S3R0, a premium Transistors - FETs, MOSFETs - Single from onsemi. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FCP360N65S3R0 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 650 V
- Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 360mOhm @ 5A, 10V
- Vgs(th) (Max) @ Id: 4.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 730 pF @ 400 V
- FET Feature: -
- Power Dissipation (Max): 83W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-220-3
- Package / Case: TO-220-3
Related Products
Infineon Technologies
IPB180N04S4LH0ATMA1
Fairchild Semiconductor
FQB16N25CTM
Vishay Siliconix
SI7450DP-T1-GE3
Infineon Technologies
ISC026N03L5SATMA1
Nexperia USA Inc.
BUK7905-40AIE,127
Renesas Electronics America Inc
RJK0451DPB-00#J5
Fairchild Semiconductor
FQA11N90
Fairchild Semiconductor
FDU7030BL
Vishay Siliconix
SQJA20EP-T1_GE3
STMicroelectronics