FCH041N60E
onsemi
onsemi
MOSFET N-CH 600V 77A TO247-3
$11.61
Available to order
Reference Price (USD)
1+
$10.04000
10+
$9.07000
450+
$6.93116
900+
$5.88087
1,350+
$5.56967
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with FCH041N60E, a high-quality Transistors - FETs, MOSFETs - Single from onsemi. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, FCH041N60E provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 600 V
- Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
- Vgs(th) (Max) @ Id: 3.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): 592W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-3
- Package / Case: TO-247-3
Related Products
onsemi
FDMS7672
Rohm Semiconductor
RSQ045N03HZGTR
Panjit International Inc.
PJMP120N60EC_T0_00001
Infineon Technologies
IPZ60R037P7XKSA1
Microchip Technology
TN0610N3-G-P013
onsemi
NTB5D0N15MC
Vishay Siliconix
SQJ848EP-T1_GE3
IXYS
IXFT42N50P2
Infineon Technologies
IPA126N10N3GXKSA1
Nexperia USA Inc.