FBG30N04CC
EPC Space, LLC
EPC Space, LLC
GAN FET HEMT 300V4A COTS 4FSMD-C
$346.39
Available to order
Reference Price (USD)
1+
$346.39000
500+
$342.9261
1000+
$339.4622
1500+
$335.9983
2000+
$332.5344
2500+
$329.0705
Exquisite packaging
Discount
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Enhance your circuit performance with FBG30N04CC, a premium Transistors - FETs, MOSFETs - Single from EPC Space, LLC. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust FBG30N04CC for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 300 V
- Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 404mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.8V @ 600µA
- Gate Charge (Qg) (Max) @ Vgs: 2.6 nC @ 5 V
- Vgs (Max): +6V, -4V
- Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 150 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 4-SMD
- Package / Case: 4-SMD, No Lead
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