FA4L4L-T1B-A
Renesas
Renesas
FA4L - BUILT-IN RESISTOR BIPOLAR
$0.03
Available to order
Reference Price (USD)
1+
$0.02995
500+
$0.0296505
1000+
$0.029351
1500+
$0.0290515
2000+
$0.028752
2500+
$0.0284525
Exquisite packaging
Discount
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The FA4L4L-T1B-A by Renesas is a trusted name in Discrete Semiconductor Products. These Transistors - Bipolar (BJT) - Single, Pre-Biased are built to meet the highest industry standards, offering reliability and efficiency. Key features include high power dissipation, stable operation, and easy integration. Widely used in computing, aerospace, and defense applications. Renesas ensures top-tier performance and support. Contact us now to discuss your requirements!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 47 kOhms
- Resistor - Emitter Base (R2): 22 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 90 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 100nA
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SC-59
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