FA4F4M-T1B-A
Renesas Electronics America Inc
Renesas Electronics America Inc
PROGRAM ADAPTER
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Choose the FA4F4M-T1B-A from Renesas Electronics America Inc for your Discrete Semiconductor Products needs. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for reliability and high performance, with features such as high current handling, low saturation, and excellent stability. Ideal for applications in medical equipment, security systems, and energy management. Renesas Electronics America Inc is your trusted partner for quality semiconductors. Inquire now for details and pricing!
Specifications
- Product Status: Obsolete
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 22 Ohms
- Resistor - Emitter Base (R2): 22 Ohms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 250µ, 5mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- Frequency - Transition: -
- Power - Max: 200 mW
- Mounting Type: -
- Package / Case: -
- Supplier Device Package: -
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