Shopping cart

Subtotal: $0.00

ESH3D M6G

Taiwan Semiconductor Corporation
ESH3D M6G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 200V 3A DO214AB
$0.00
Available to order
Reference Price (USD)
6,000+
$0.11160
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Discontinued at Digi-Key
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 200 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 900 mV @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 20 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 200 V
  • Capacitance @ Vr, F: 45pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AB, SMC
  • Supplier Device Package: DO-214AB (SMC)
  • Operating Temperature - Junction: -55°C ~ 175°C

Related Products

Vishay General Semiconductor - Diodes Division

SS3H9HE3/57T

Taiwan Semiconductor Corporation

ESH2BA R3G

Taiwan Semiconductor Corporation

1T7G A1G

Diodes Incorporated

S1A-13

Taiwan Semiconductor Corporation

MBR1050HC0G

Taiwan Semiconductor Corporation

SF35G B0G

Vishay General Semiconductor - Diodes Division

P300K-E3/73

Rohm Semiconductor

RB521S-30FTE61

Vishay General Semiconductor - Diodes Division

SS1P6L-E3/85A

NXP USA Inc.

BAS316/ZLX

Top