ES6U42T2R
Rohm Semiconductor
Rohm Semiconductor
MOSFET P-CH 20V 1A 6WEMT
$0.00
Available to order
Reference Price (USD)
8,000+
$0.20010
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose ES6U42T2R by Rohm Semiconductor. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with ES6U42T2R inquire now for more details!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 390mOhm @ 1A, 4.5V
- Vgs(th) (Max) @ Id: 2V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 2.1 nC @ 4.5 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
- FET Feature: Schottky Diode (Body)
- Power Dissipation (Max): 700mW (Ta)
- Operating Temperature: 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 6-WEMT
- Package / Case: 6-SMD, Flat Leads
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