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ES3JBHR5G

Taiwan Semiconductor Corporation
ES3JBHR5G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 3A DO214AA
$0.76
Available to order
Reference Price (USD)
850+
$0.21014
1,700+
$0.18802
2,550+
$0.17143
5,950+
$0.16037
21,250+
$0.15484
Exquisite packaging
Discount
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Specifications

  • Product Status: Discontinued at Digi-Key
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 3A
  • Voltage - Forward (Vf) (Max) @ If: 1.45 V @ 3 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 10 µA @ 600 V
  • Capacitance @ Vr, F: 34pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AA, SMB
  • Supplier Device Package: DO-214AA (SMB)
  • Operating Temperature - Junction: -55°C ~ 150°C

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