Shopping cart

Subtotal: $0.00

ES1LJ

Taiwan Semiconductor Corporation
ES1LJ Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A DO214AC
$0.10
Available to order
Reference Price (USD)
1+
$0.10128
500+
$0.1002672
1000+
$0.0992544
1500+
$0.0982416
2000+
$0.0972288
2500+
$0.096216
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 18pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214AC, SMA
  • Supplier Device Package: DO-214AC (SMA)
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Central Semiconductor Corp

CMDD6001 BK PBFREE

Vishay General Semiconductor - Diodes Division

ES3BHE3_A/H

Vishay General Semiconductor - Diodes Division

S3AHE3_A/I

Comchip Technology

CDSUR400B

Vishay General Semiconductor - Diodes Division

V3PM10-M3/H

Vishay General Semiconductor - Diodes Division

S1A-E3/61T

NTE Electronics, Inc

NTE5982

STMicroelectronics

STTH302S

Renesas Electronics America Inc

1N4749AT9-E

Vishay General Semiconductor - Diodes Division

VS-30WQ06FN-M3

Top