ES1JL R3G
Taiwan Semiconductor Corporation
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SUB SMA
$0.70
Available to order
Reference Price (USD)
1+
$0.70000
500+
$0.693
1000+
$0.686
1500+
$0.679
2000+
$0.672
2500+
$0.665
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Taiwan Semiconductor Corporation's ES1JL R3G Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Taiwan Semiconductor Corporation provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 600 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 35 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 600 V
- Capacitance @ Vr, F: 8pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-219AB
- Supplier Device Package: Sub SMA
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Renesas Electronics America Inc
HSM221CTL
Infineon Technologies
D1481N68TXPSA1
Diotec Semiconductor
ES2CSMA
Diotec Semiconductor
SK34
Nexperia USA Inc.
PMEG2005EJ,115
Taiwan Semiconductor Corporation
SF16GH
Taiwan Semiconductor Corporation
UF1D
Diodes Incorporated
BAT54LPS-7
Wolfspeed, Inc.
CSD01060A
Yangzhou Yangjie Electronic Technology Co.,Ltd