Shopping cart

Subtotal: $0.00

ES1JF R3G

Taiwan Semiconductor Corporation
ES1JF R3G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 600V 1A SMA-FL
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 600 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 600 V
  • Capacitance @ Vr, F: 9pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-221AC, SMA Flat Leads
  • Supplier Device Package: SMA-FL
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

Vishay General Semiconductor - Diodes Division

CSA2D-E3/H

Diodes Incorporated

BAT750-13-F

Vishay General Semiconductor - Diodes Division

SD500R40PSC

Vishay General Semiconductor - Diodes Division

VS-80-1339PBF

Central Semiconductor Corp

CTLSH1-40M322S TR

Rohm Semiconductor

RB085B-30GTL

Taiwan Semiconductor Corporation

S5J R7

Vishay General Semiconductor - Diodes Division

VS-SDC270M08MPBF

Taiwan Semiconductor Corporation

ES3A M6

Top