ES1CHE3_A/H
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214AC
$0.41
Available to order
Reference Price (USD)
1,800+
$0.13195
3,600+
$0.12220
5,400+
$0.11570
12,600+
$0.10920
45,000+
$0.10595
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Revolutionize your power electronics with Vishay General Semiconductor - Diodes Division's ES1CHE3_A/H Single Rectifier Diodes, offering exceptional performance and reliability. These diodes are ideal for high-frequency and high-voltage applications, including telecommunications and medical devices. With advanced features like low forward drop and high temperature operation, they set the benchmark for quality. Vishay General Semiconductor - Diodes Division provides solutions you can trust. Get started by sending us your requirements!
Specifications
- Product Status: Active
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 25 ns
- Current - Reverse Leakage @ Vr: 5 µA @ 150 V
- Capacitance @ Vr, F: 10pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214AC, SMA
- Supplier Device Package: DO-214AC (SMA)
- Operating Temperature - Junction: -55°C ~ 150°C
Related Products
Panjit International Inc.
UF801F_T0_00001
Taiwan Semiconductor Corporation
HS5A
Vishay General Semiconductor - Diodes Division
SS1F4HM3/H
NXP USA Inc.
NUR460/L02,112
Vishay General Semiconductor - Diodes Division
RGP02-20E-E3/54
Vishay General Semiconductor - Diodes Division
GI754-E3/73
Vishay General Semiconductor - Diodes Division
BYG22A-M3/TR
Vishay General Semiconductor - Diodes Division
MSE1PD-M3/89A
Infineon Technologies
BAS3005B-02VH6327
GeneSiC Semiconductor