Shopping cart

Subtotal: $0.00

ES1BLHM2G

Taiwan Semiconductor Corporation
ES1BLHM2G Preview
Taiwan Semiconductor Corporation
DIODE GEN PURP 100V 1A SUB SMA
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram

Specifications

  • Product Status: Active
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 950 mV @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 35 ns
  • Current - Reverse Leakage @ Vr: 5 µA @ 100 V
  • Capacitance @ Vr, F: 10pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-219AB
  • Supplier Device Package: Sub SMA
  • Operating Temperature - Junction: -55°C ~ 150°C

Related Products

STMicroelectronics

STTH60L04W

Taiwan Semiconductor Corporation

F1T6G A1G

Taiwan Semiconductor Corporation

MBR1035 C0G

Taiwan Semiconductor Corporation

UF1MHR1G

Taiwan Semiconductor Corporation

SSL14HR3G

Taiwan Semiconductor Corporation

SS16L MTG

Vishay General Semiconductor - Diodes Division

10ETF12FP

Diodes Incorporated

B160AF-13

Micro Commercial Co

R4000-AP

Taiwan Semiconductor Corporation

SSL12 R3G

Top