EPC2110
EPC
EPC
GANFET 2NCH 120V 3.4A DIE
$2.37
Available to order
Reference Price (USD)
2,500+
$1.02200
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2110 from EPC is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, EPC2110 offers the reliability you need. Contact us now to discuss how we can support your project requirements with EPC s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual) Common Source
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 120V
- Current - Continuous Drain (Id) @ 25°C: 3.4A
- Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 700µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 80pF @ 60V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: -
- Package / Case: Die
- Supplier Device Package: Die
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