EPC2102ENGRT
EPC
EPC
GANFET 2 N-CHANNEL 60V 23A DIE
$0.00
Available to order
Reference Price (USD)
500+
$4.74300
1,000+
$4.28400
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2102ENGRT by EPC is a standout in the Discrete Semiconductor Products category, specifically for Transistors - FETs, MOSFETs - Arrays. Engineered for excellence, these components offer unmatched reliability and performance. Features such as high voltage tolerance, low gate charge, and superior thermal management make them a preferred choice. Applications range from industrial automation to consumer electronics. Don t miss out on the opportunity to integrate EPC2102ENGRT into your systems contact us for more details and pricing.
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 60V
- Current - Continuous Drain (Id) @ 25°C: 23A (Tj)
- Rds On (Max) @ Id, Vgs: 4.4mOhm @ 20A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 7mA
- Gate Charge (Qg) (Max) @ Vgs: 6.8nC @ 5V
- Input Capacitance (Ciss) (Max) @ Vds: 830pF @ 30V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
Related Products
Vishay Siliconix
SI4501ADY-T1-GE3
Vishay Siliconix
SI5999EDU-T1-GE3
Vishay Siliconix
SI3948DV-T1-GE3
Infineon Technologies
IRF40H233XTMA1
Vishay Siliconix
SI9934BDY-T1-GE3
Vishay Siliconix
SI6963BDQ-T1-GE3
Vishay Siliconix
SI6973DQ-T1-GE3
Infineon Technologies
IRF9953PBF
Vishay Siliconix
SI4276DY-T1-E3
Vishay Siliconix