EPC2100ENGRT
EPC
EPC
GANFET 2 N-CH 30V 9.5A/38A DIE
$5.18
Available to order
Reference Price (USD)
500+
$4.71200
1,000+
$4.25600
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The EPC2100ENGRT from EPC is a premium option in the Discrete Semiconductor Products category, specializing in Transistors - FETs, MOSFETs - Arrays. With advanced features such as high-frequency operation, low leakage current, and excellent ESD protection, these components are perfect for demanding electronic applications. Whether you re working on telecommunications, computing, or medical devices, EPC2100ENGRT offers the reliability you need. Contact us now to discuss how we can support your project requirements with EPC s cutting-edge solutions.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Half Bridge)
- FET Feature: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 30V
- Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 40A (Ta)
- Rds On (Max) @ Id, Vgs: 8.2mOhm @ 25A, 5V, 2.1mOhm @ 25A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 4mA, 2.5V @ 16mA
- Gate Charge (Qg) (Max) @ Vgs: 4.9nC @ 15V, 19nC @ 15V
- Input Capacitance (Ciss) (Max) @ Vds: 475pF @ 15V, 1960pF @ 15V
- Power - Max: -
- Operating Temperature: -40°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: Die
- Supplier Device Package: Die
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