EPC2012
EPC
EPC
GANFET N-CH 200V 3A DIE
$0.00
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Reference Price (USD)
1,000+
$1.35575
Exquisite packaging
Discount
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Upgrade your electronic designs with EPC2012 by EPC, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, EPC2012 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Discontinued at Digi-Key
- FET Type: N-Channel
- Technology: GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 5V
- Rds On (Max) @ Id, Vgs: 100mOhm @ 3A, 5V
- Vgs(th) (Max) @ Id: 2.5V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 1.8 nC @ 5 V
- Vgs (Max): +6V, -5V
- Input Capacitance (Ciss) (Max) @ Vds: 145 pF @ 100 V
- FET Feature: -
- Power Dissipation (Max): -
- Operating Temperature: -40°C ~ 125°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: Die
- Package / Case: Die
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