EMX1DXV6T5G
onsemi
onsemi
TRANS 2NPN 50V 0.1A SOT563
$0.08
Available to order
Reference Price (USD)
8,000+
$0.08794
16,000+
$0.08055
24,000+
$0.07563
56,000+
$0.06988
Exquisite packaging
Discount
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Achieve peak performance with onsemi's EMX1DXV6T5G BJT Arrays, crafted for precision and durability. These arrays feature high-speed operation, low thermal resistance, and excellent matching properties, ensuring consistent results in critical applications. Commonly utilized in data acquisition, telecommunications, and energy management systems. Contact us today to discuss your project requirements and discover how we can help you succeed!
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 180MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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