EMG2DXV5T1
onsemi
onsemi
TRANS 2NPN PREBIAS 0.23W SOT553
$0.04
Available to order
Reference Price (USD)
1+
$0.04000
500+
$0.0396
1000+
$0.0392
1500+
$0.0388
2000+
$0.0384
2500+
$0.038
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade to onsemi's premium EMG2DXV5T1 BJT Arrays for unmatched performance in discrete semiconductor applications. These pre-biased transistor pairs deliver consistent results in amplification and switching tasks, featuring optimized base-emitter resistors for immediate circuit integration. Perfect for use in voltage regulators, relay drivers, and signal conditioning circuits within consumer electronics and embedded systems. The product line boasts high power dissipation, wide operating temperature ranges, and moisture-resistant packaging. As an industry leader, onsemi provides technical documentation and design support for all EMG2DXV5T1 applications. Start your order process submit an inquiry to receive customized solutions!
Specifications
- Product Status: Obsolete
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 230mW
- Mounting Type: Surface Mount
- Package / Case: SOT-553
- Supplier Device Package: SOT-553
Related Products
Toshiba Semiconductor and Storage
RN2710JE(TE85L,F)
onsemi
EMC5DXV5T1G
onsemi
MUN5137DW1T1
Nexperia USA Inc.
PUMB9,115
Toshiba Semiconductor and Storage
RN1503(TE85L,F)
Toshiba Semiconductor and Storage
RN4983,LXHF(CT
Toshiba Semiconductor and Storage
RN4608(TE85L,F)
Panasonic Electronic Components
XN0A31100L
onsemi
MUN5133DW1T1G
NXP USA Inc.