EGF1CHE3_A/I
Vishay General Semiconductor - Diodes Division
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 150V 1A DO214BA
$0.00
Available to order
Reference Price (USD)
6,500+
$0.20300
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Achieve superior power conversion with EGF1CHE3_A/I Single Rectifier Diodes from Vishay General Semiconductor - Diodes Division. These diodes are designed for high-performance applications, offering low forward voltage and high reverse voltage capabilities. Perfect for industrial automation, consumer electronics, and energy-efficient systems, they ensure reliable operation under varying loads. Key benefits include extended lifespan, minimal power dissipation, and compact design. Elevate your projects with Vishay General Semiconductor - Diodes Division's cutting-edge technology. Contact us for more information!
Specifications
- Product Status: Obsolete
- Diode Type: Standard
- Voltage - DC Reverse (Vr) (Max): 150 V
- Current - Average Rectified (Io): 1A
- Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
- Speed: Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr): 50 ns
- Current - Reverse Leakage @ Vr: 1 µA @ 150 V
- Capacitance @ Vr, F: 15pF @ 4V, 1MHz
- Mounting Type: Surface Mount
- Package / Case: DO-214BA
- Supplier Device Package: DO-214BA (GF1)
- Operating Temperature - Junction: -65°C ~ 175°C
Related Products
Toshiba Semiconductor and Storage
CMF01A,LQ(M
Comchip Technology
CDBQC43-HF
Central Semiconductor Corp
CPD200-CEN1384C-CT
Microchip Technology
JANTXV1N6779
Microchip Technology
JANTX1N3911AR
Micro Commercial Co
ER1M-GTPS01
Micro Commercial Co
LLSD101B-TP
Vishay General Semiconductor - Diodes Division
VS-99-8103PBF
Micro Commercial Co
1H1G-TP
Micro Commercial Co