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EGF1BHE3_A/I

Vishay General Semiconductor - Diodes Division
EGF1BHE3_A/I Preview
Vishay General Semiconductor - Diodes Division
DIODE GEN PURP 100V 1A DO214BA
$0.00
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Reference Price (USD)
6,500+
$0.20300
Exquisite packaging
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Specifications

  • Product Status: Obsolete
  • Diode Type: Standard
  • Voltage - DC Reverse (Vr) (Max): 100 V
  • Current - Average Rectified (Io): 1A
  • Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
  • Speed: Fast Recovery =< 500ns, > 200mA (Io)
  • Reverse Recovery Time (trr): 50 ns
  • Current - Reverse Leakage @ Vr: 1 µA @ 100 V
  • Capacitance @ Vr, F: 15pF @ 4V, 1MHz
  • Mounting Type: Surface Mount
  • Package / Case: DO-214BA
  • Supplier Device Package: DO-214BA (GF1)
  • Operating Temperature - Junction: -65°C ~ 175°C

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