EDB5432BEBH-1DIT-F-R TR
Micron Technology Inc.
Micron Technology Inc.
IC DRAM 512MBIT PAR 134VFBGA
$4.15
Available to order
Reference Price (USD)
1,000+
$4.51631
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Micron Technology Inc. EDB5432BEBH-1DIT-F-R TR Memory ICs deliver cutting-edge technology for modern applications. Perfect for automotive, telecommunications, and IoT devices, these ICs offer high reliability and low latency. Notable features are extended lifecycle, wide temperature range, and compatibility with multiple interfaces. Choose Micron Technology Inc. EDB5432BEBH-1DIT-F-R TR for superior memory solutions. Get in touch with us today to discuss your project needs!
Specifications
- Product Status: Not For New Designs
- Memory Type: Volatile
- Memory Format: DRAM
- Technology: SDRAM - Mobile LPDDR2
- Memory Size: 512Mb (16M x 32)
- Memory Interface: Parallel
- Clock Frequency: 533 MHz
- Write Cycle Time - Word, Page: -
- Access Time: -
- Voltage - Supply: 1.14V ~ 1.95V
- Operating Temperature: -40°C ~ 85°C (TC)
- Mounting Type: Surface Mount
- Package / Case: 134-VFBGA
- Supplier Device Package: 134-VFBGA (10x11.5)
Related Products
Microchip Technology
AT28C010-15JU-T
Microchip Technology
SST26VF064B-104V/SO
Flip Electronics
S25FL116K0XMFA043
ISSI, Integrated Silicon Solution Inc
IS46R16320E-6BLA1-TR
Micron Technology Inc.
MT29F4G08ABADAWP-AATX:D TR
Infineon Technologies
S70KS1282GABHV020
Infineon Technologies
CY7C2568KV18-450BZC
Winbond Electronics
W631GU6NB-15
Renesas Electronics America Inc
71124S20YGI
ISSI, Integrated Silicon Solution Inc