DTC123YEBHZGTL
Rohm Semiconductor
Rohm Semiconductor
DTC123YEBHZG IS A TRANSISTOR WIT
$0.00
Available to order
Reference Price (USD)
3,000+
$0.05106
6,000+
$0.04440
15,000+
$0.03774
30,000+
$0.03552
75,000+
$0.03330
150,000+
$0.03108
Exquisite packaging
Discount
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The DTC123YEBHZGTL from Rohm Semiconductor is a premium selection in the Discrete Semiconductor Products market. Specifically designed as Transistors - Bipolar (BJT) - Single, Pre-Biased, these components provide exceptional reliability and efficiency. Features include fast switching speeds, high voltage tolerance, and compact design. They are perfect for applications in telecommunications, medical devices, and renewable energy systems. Choose Rohm Semiconductor for cutting-edge semiconductor technology. Get in touch for pricing and availability details!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): 10 kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 33 @ 10mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 250 MHz
- Power - Max: 150 mW
- Mounting Type: Surface Mount
- Package / Case: SC-89, SOT-490
- Supplier Device Package: EMT3F (SOT-416FL)
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