DTC123TCAT116
Rohm Semiconductor
Rohm Semiconductor
NPN, SOT-23, R1 ALONE TYPE DIGIT
$0.07
Available to order
Reference Price (USD)
1+
$0.06996
500+
$0.0692604
1000+
$0.0685608
1500+
$0.0678612
2000+
$0.0671616
2500+
$0.066462
Exquisite packaging
Discount
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The DTC123TCAT116 by Rohm Semiconductor is a premier choice in the Discrete Semiconductor Products category. These Transistors - Bipolar (BJT) - Single, Pre-Biased are designed for precision and efficiency, featuring high gain bandwidth, low distortion, and excellent thermal management. Perfect for RF applications, sensor interfaces, and control systems. Rohm Semiconductor stands for quality and innovation. Reach out to us for expert advice and competitive pricing!
Specifications
- Product Status: Active
- Transistor Type: NPN - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 300mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 500nA (ICBO)
- Frequency - Transition: 250 MHz
- Power - Max: 200 mW
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SST3
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