DMTH8008SFGQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
$0.61
Available to order
Reference Price (USD)
1+
$0.61123
500+
$0.6051177
1000+
$0.5990054
1500+
$0.5928931
2000+
$0.5867808
2500+
$0.5806685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMTH8008SFGQ-7, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMTH8008SFGQ-7 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 14A, 10V
- Vgs(th) (Max) @ Id: 4V @ 1mA
- Gate Charge (Qg) (Max) @ Vgs: 31.7 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1945 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 50W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI3333-8
- Package / Case: 8-PowerVDFN
Related Products
Harris Corporation
RFP10N12L
Micro Commercial Co
MCAC28P06Y-TP
Renesas
UPA1727G-E1-AT
Diodes Incorporated
DMT12H060LFDF-13
Infineon Technologies
AUIRFZ34N
onsemi
NVTFS027N10MCLTAG
Diodes Incorporated
DMN2005UFGQ-13
Vishay Siliconix
SQJ858EP-T1_GE3
onsemi
EFC4611-TR
Diodes Incorporated