DMTH6010SK3Q-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 60V 16.3A/70A TO252
$1.28
Available to order
Reference Price (USD)
2,500+
$0.58603
5,000+
$0.56010
12,500+
$0.54157
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit performance with DMTH6010SK3Q-13, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMTH6010SK3Q-13 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.1W (Ta)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-252-3
- Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Related Products
Microchip Technology
APT5015BVRG
Infineon Technologies
BSC019N04LSTATMA1
Vishay Siliconix
SIHP25N60EFL-GE3
onsemi
NVMTS0D6N04CTXG
Taiwan Semiconductor Corporation
TSM070NB04CR RLG
Texas Instruments
CSD17577Q3AT
Vishay Siliconix
SIHD3N50D-GE3
Infineon Technologies
IPI80N04S2H4AKSA2
Microchip Technology
APT22F120L
Fairchild Semiconductor