DMTH4002SCTB-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 31V~40V TO263 T&R
$0.99
Available to order
Reference Price (USD)
1+
$0.98830
500+
$0.978417
1000+
$0.968534
1500+
$0.958651
2000+
$0.948768
2500+
$0.938885
Exquisite packaging
Discount
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMTH4002SCTB-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMTH4002SCTB-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 40 V
- Current - Continuous Drain (Id) @ 25°C: 192A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 3mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 77.5 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 7180 pF @ 20 V
- FET Feature: -
- Power Dissipation (Max): 6W (Ta), 166.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: TO-263AB (D²PAK)
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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