DMTH10H072LPS-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.27
Available to order
Reference Price (USD)
1+
$0.26652
500+
$0.2638548
1000+
$0.2611896
1500+
$0.2585244
2000+
$0.2558592
2500+
$0.253194
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Diodes Incorporated presents DMTH10H072LPS-13, a high-performance Transistors - FETs, MOSFETs - Single in the Discrete Semiconductor Products category. Designed for efficiency, this component features minimal conduction losses and superior thermal performance, making it ideal for high-frequency applications. From industrial automation to smart home devices, DMTH10H072LPS-13 delivers unmatched reliability. Get in touch today for technical specifications and purchasing options!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 57mOhm @ 4.5A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 266 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.5W (Ta), 51.7W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI5060-8 (Type UX)
- Package / Case: 8-PowerTDFN
Related Products
IXYS
IXFN110N85X
IXYS
IXFN74N100X
Infineon Technologies
IPB042N10N3GATMA1
Microchip Technology
VN3205N3-G
Rohm Semiconductor
RUE003N02TL
NXP USA Inc.
BUK653R5-55C,127
Nexperia USA Inc.
PMN25ENEH
Nexperia USA Inc.
PMV48XPAR
Vishay Siliconix
SIHF080N60E-GE3
Renesas Electronics America Inc