DMTH10H009SPSQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI50
$0.51
Available to order
Reference Price (USD)
1+
$0.51128
500+
$0.5061672
1000+
$0.5010544
1500+
$0.4959416
2000+
$0.4908288
2500+
$0.485716
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover DMTH10H009SPSQ-13, a versatile Transistors - FETs, MOSFETs - Single solution from Diodes Incorporated, a trusted name in Discrete Semiconductor Products. This MOSFET combines high power density with low on-resistance, perfect for compact and energy-efficient designs. Applications include solar inverters, electric vehicles, and wearable technology. Interested in this innovative component? Send us your inquiry now for more information!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 100 V
- Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 86A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 2085 pF @ 50 V
- FET Feature: -
- Power Dissipation (Max): 1.6W (Ta), 100W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: PowerDI5060-8
- Package / Case: 8-PowerTDFN
Related Products
onsemi
NTMFS008N12MCT1G
Infineon Technologies
IPC300N20N3X7SA1
Infineon Technologies
IPL60R115CFD7AUMA1
onsemi
2SK3449
Harris Corporation
RFG45N06
onsemi
NTMYS2D1N04CLTWG
Diodes Incorporated
DMTH6010LPSW-13
Harris Corporation
IRF9542
Diodes Incorporated
DMN3027LFG-7
Renesas Electronics America Inc