DMT69M5LFVWQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 41V~60V POWERDI333
$0.39
Available to order
Reference Price (USD)
1+
$0.39239
500+
$0.3884661
1000+
$0.3845422
1500+
$0.3806183
2000+
$0.3766944
2500+
$0.3727705
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with DMT69M5LFVWQ-13 by Diodes Incorporated, a top-tier choice in Discrete Semiconductor Products. Specifically crafted for Transistors - FETs, MOSFETs - Single applications, this product offers superior power handling and energy efficiency. Key features include high voltage tolerance, minimal power loss, and robust durability, making it perfect for switching and amplification tasks. Whether for industrial machinery, renewable energy systems, or portable devices, DMT69M5LFVWQ-13 ensures reliable operation. Ready to integrate this component into your project? Submit an inquiry now for pricing and availability!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 40.6A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 8.3mOhm @ 13.5A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 28.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1406 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 2.74W (Ta), 20.5W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Diodes Incorporated
DMN6040SE-13
Vishay Siliconix
SIHH125N60EF-T1GE3
Infineon Technologies
IPI11N60C3AAKSA2
Taiwan Semiconductor Corporation
TSM035NB04CZ
Diodes Incorporated
DMN5L06WKQ-7
Nexperia USA Inc.
PMPB29XNEAX
Vishay Siliconix
IRFR220PBF-BE3
Renesas Electronics America Inc
RJK0353DPA-WS#J0
Goford Semiconductor
G33N03S
Renesas Electronics America Inc