DMT3009UFVW-13
Diodes Incorporated
Diodes Incorporated
MOSFET N-CH 30V 10.6A/30A PWRDI
$0.19
Available to order
Reference Price (USD)
1+
$0.18908
500+
$0.1871892
1000+
$0.1852984
1500+
$0.1834076
2000+
$0.1815168
2500+
$0.179626
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Boost your electronic applications with DMT3009UFVW-13, a reliable Transistors - FETs, MOSFETs - Single by Diodes Incorporated. As a leader in Discrete Semiconductor Products, we offer components with low gate charge, high breakdown voltage, and excellent switching performance. Whether for aerospace, robotics, or energy systems, DMT3009UFVW-13 meets the highest standards. Contact our team today for expert advice and competitive pricing!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 10.6A (Ta), 30A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 11mOhm @ 11A, 10V
- Vgs(th) (Max) @ Id: 1.8V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 7.4 nC @ 10 V
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 894 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 1.2W (Ta), 2.6W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
Related Products
Nexperia USA Inc.
PMV28XPEAR
Diodes Incorporated
DMN62D1LFDQ-7
IXYS
IXTY02N50D-TRL
Renesas Electronics America Inc
2SK3322(1)-ZK-E2-AZ
Infineon Technologies
IPTG025N08NM5ATMA1
Harris Corporation
RFP6P08
Diodes Incorporated
DMN1008UFDFQ-13
Diodes Incorporated
DMT3009LFVW-13
Vishay Siliconix
SQD40N10-25-T4_GE3
Renesas Electronics America Inc