DMT3006LFDFQ-7
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 25V~30V U-DFN2020-
$0.18
Available to order
Reference Price (USD)
1+
$0.18056
500+
$0.1787544
1000+
$0.1769488
1500+
$0.1751432
2000+
$0.1733376
2500+
$0.171532
Exquisite packaging
Discount
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Enhance your circuit performance with DMT3006LFDFQ-7, a premium Transistors - FETs, MOSFETs - Single from Diodes Incorporated. As part of the Discrete Semiconductor Products lineup, this MOSFET excels in delivering high-speed switching and low power consumption. Its advanced design reduces heat generation and improves efficiency, suitable for power supplies, motor controls, and LED lighting. Trust DMT3006LFDFQ-7 for consistent quality and long-lasting performance. For bulk orders or custom specifications, reach out to our sales team today!
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 14.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 3.7V, 10V
- Rds On (Max) @ Id, Vgs: 7mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id: 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1155 pF @ 15 V
- FET Feature: -
- Power Dissipation (Max): 800mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type F)
- Package / Case: 6-UDFN Exposed Pad
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