DMT10H032LDV-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 61V~100V POWERDI33
$0.39
Available to order
Reference Price (USD)
1+
$0.39237
500+
$0.3884463
1000+
$0.3845226
1500+
$0.3805989
2000+
$0.3766752
2500+
$0.3727515
Exquisite packaging
Discount
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Optimize your electronic circuits with Diodes Incorporated s DMT10H032LDV-13, a key player in the Discrete Semiconductor Products category for Transistors - FETs, MOSFETs - Arrays. These components are celebrated for their high efficiency, compact design, and long-lasting performance. Key features include fast switching, low threshold voltage, and superior thermal conductivity. Ideal for applications in power converters, RF amplifiers, and battery management systems. Reach out to us today to explore how DMT10H032LDV-13 can elevate your design and operational efficiency.
Specifications
- Product Status: Active
- FET Type: 2 N-Channel (Dual)
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 100V
- Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
- Rds On (Max) @ Id, Vgs: 36mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 11.9nC @ 10V
- Input Capacitance (Ciss) (Max) @ Vds: 683pF @ 50V
- Power - Max: 1W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-PowerVDFN
- Supplier Device Package: PowerDI3333-8 (Type UXC)
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