DMS2220LFW-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 2.9A 8DFN
$0.00
Available to order
Reference Price (USD)
1+
$0.00000
500+
$0
1000+
$0
1500+
$0
2000+
$0
2500+
$0
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your electronic systems with DMS2220LFW-7, a high-quality Transistors - FETs, MOSFETs - Single from Diodes Incorporated. This Discrete Semiconductor Products component is built for reliability, featuring enhanced thermal stability and fast response times. Perfect for automotive electronics, power tools, and IoT devices, DMS2220LFW-7 provides efficient power management solutions. Contact us today to discuss your requirements and place an order!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 2.9A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 95mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id: 1.3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Vgs (Max): ±12V
- Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 10 V
- FET Feature: Schottky Diode (Isolated)
- Power Dissipation (Max): 1.5W (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN3020 (3x2)
- Package / Case: 8-VDFN Exposed Pad
Related Products
Vishay Siliconix
IRFB11N50A
onsemi
NVMFS5C442NWFT1G
Infineon Technologies
IPD12CN10NGBUMA1
IXYS
IXFC52N30P
IXYS
IXKH30N60C5
Rohm Semiconductor
RDN120N25
Infineon Technologies
IRF6712STR1PBF
Fairchild Semiconductor
IRFW610BTM
Infineon Technologies
IRF630NLPBF
Infineon Technologies