DMP21D6UFD-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 20V 600MA 3DFN
$0.37
Available to order
Reference Price (USD)
3,000+
$0.08026
6,000+
$0.07056
15,000+
$0.06086
30,000+
$0.05762
75,000+
$0.05439
150,000+
$0.04792
Exquisite packaging
Discount
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Discover high-performance DMP21D6UFD-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMP21D6UFD-7 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 1Ohm @ 100mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 0.8 nC @ 8 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 46.1 pF @ 10 V
- FET Feature: -
- Power Dissipation (Max): 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: X1-DFN1212-3
- Package / Case: 3-UDFN
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