DMP1022UFDE-7
Diodes Incorporated
Diodes Incorporated
MOSFET P-CH 12V 9.1A 6UDFN
$0.00
Available to order
Reference Price (USD)
3,000+
$0.17128
6,000+
$0.16193
15,000+
$0.15258
30,000+
$0.14136
75,000+
$0.13668
Exquisite packaging
Discount
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Discover high-performance DMP1022UFDE-7 from Diodes Incorporated, a leading solution in the Discrete Semiconductor Products category. Our Transistors - FETs, MOSFETs - Single are designed for efficiency and reliability, making them ideal for various electronic applications. These components feature low on-resistance, fast switching speeds, and excellent thermal performance, ensuring optimal functionality in power management and amplification circuits. Commonly used in automotive, industrial, and consumer electronics, DMP1022UFDE-7 delivers consistent performance under demanding conditions. Interested in learning more? Contact us today for a detailed quote and technical support!
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 9.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
- Rds On (Max) @ Id, Vgs: 16mOhm @ 8.2A, 4.5V
- Vgs(th) (Max) @ Id: 800mV @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 42.6 nC @ 5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 2953 pF @ 4 V
- FET Feature: -
- Power Dissipation (Max): 660mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: U-DFN2020-6 (Type E)
- Package / Case: 6-PowerUDFN
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