DMP1011LFVQ-13
Diodes Incorporated
Diodes Incorporated
MOSFET BVDSS: 8V~24V POWERDI3333
$0.22
Available to order
Reference Price (USD)
1+
$0.22267
500+
$0.2204433
1000+
$0.2182166
1500+
$0.2159899
2000+
$0.2137632
2500+
$0.2115365
Exquisite packaging
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For cutting-edge Transistors - FETs, MOSFETs - Single solutions, choose DMP1011LFVQ-13 by Diodes Incorporated. A key player in Discrete Semiconductor Products, this MOSFET boasts low RDS(on), high current capacity, and excellent switching characteristics. Its applications span across telecom infrastructure, medical devices, and consumer electronics. Elevate your designs with DMP1011LFVQ-13 inquire now for more details!
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 12 V
- Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 19A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 11.7mOhm @ 12A, 4.5V
- Vgs(th) (Max) @ Id: 1.2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 9.5 nC @ 6 V
- Vgs (Max): -6V
- Input Capacitance (Ciss) (Max) @ Vds: 913 pF @ 6 V
- FET Feature: -
- Power Dissipation (Max): 1.05W
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount, Wettable Flank
- Supplier Device Package: PowerDI3333-8 (SWP) Type UX
- Package / Case: 8-PowerVDFN
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